| PART |
Description |
Maker |
| M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
PATCHCORD SQ SCKT-ALLIG CLIP RED
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| DA28F320S5-90 E28F320S5-90 E28F320S5-110 |
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 4M X 8 FLASH 5V PROM, 90 ns, PDSO56
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 4M X 8 FLASH 5V PROM, 110 ns, PDSO56
|
Intel Corp.
Intel, Corp.
|
| MCM32L100 MCM32100 MCM32100S10 MCM32100S80 MCM3210 |
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 32 FAST PAGE DRAM MODULE, 100 ns, SMA72
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 1M X 32 FAST PAGE DRAM MODULE, 100 ns, SMA72
1M x 32 Bit Dynamic Random Access Memory Module
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| LH28F320S3-L11 LH28F320S3-L14 |
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 32兆位MBx8/2MBx16）智闪光记忆
|
Sharp Corporation
Sharp, Corp.
|
| FK10SM-12 |
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高速开关使
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HIF6H-80PA-1.27DSA HIF6R-100SD-AA-L HIF6H-040PA-1. |
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
1.27 Pitch Coaxial Ribbon Cable Connector
|
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| M378T3253FGZ0-CE6/D5/CC M378T6453FGZ0-CE6/D5/CC M3 |
64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
RES 120K OHM 1/6W 5% CARBON FILM
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
DDR2 Unbuffered SDRAM MODULE 无缓冲DDR2的内存模
Fuses, 20A 250V CERAMIC LEAD 无缓冲DDR2的内存模
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 无缓冲DDR2的内存模
DDR2 Unbuffered SDRAM MODULE 无缓DDR2的内存模
RES 11K OHM 1/6W 5% CARBON FILM 无缓冲DDR2的内存模
RES 12K OHM 1/6W 5% CARBON FILM 无缓冲DDR2的内存模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| X25650 X25650S8 X25650S8-2.5 X25650S8I X25650S8I-2 |
5MHz SPI Serial E 2 PROM with Block Lock TM Protection 5MHz的SPI串行e座门锁TM保护胎膜早破
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
EPCOS AG
XICOR[Xicor Inc.]
|
| RC10S10 RC10S01 RC10S02 RC10S04 RC10S06 RC10S08 |
SILICON SILASTIC CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 10A
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
SSE[Shanghai Sunrise Electronics]
Shanghai Sunrise Electronics Co., LTD.
|
| C67078-A3210-A2 BUZ385 |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 |
Fast Recovery Diode
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 400 A, 5600 V, SILICON, RECTIFIER DIODE
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Dynex Semiconductor, Ltd.
|
